1. Product Scientific Research and Structural Honesty
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms set up in a tetrahedral lattice, mostly in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing remarkable atomic bond stamina.
The Si– C bond, with a bond power of approximately 318 kJ/mol, is amongst the strongest in architectural porcelains, giving exceptional thermal security, hardness, and resistance to chemical strike.
This robust covalent network causes a product with a melting point surpassing 2700 ° C(sublimes), making it one of one of the most refractory non-oxide porcelains available for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC keeps mechanical stamina and creep resistance at temperature levels over 1400 ° C, where several metals and standard ceramics begin to soften or weaken.
Its low coefficient of thermal development (~ 4.0 × 10 ⁻⁶/ K) combined with high thermal conductivity (80– 120 W/(m · K)) enables fast thermal cycling without devastating splitting, a critical quality for crucible performance.
These innate residential or commercial properties stem from the balanced electronegativity and comparable atomic dimensions of silicon and carbon, which promote a highly steady and densely loaded crystal framework.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are generally made from sintered or reaction-bonded SiC powders, with microstructure playing a crucial duty in longevity and thermal shock resistance.
Sintered SiC crucibles are generated through solid-state or liquid-phase sintering at temperatures above 2000 ° C, commonly with boron or carbon additives to improve densification and grain border cohesion.
This procedure produces a fully dense, fine-grained structure with marginal porosity (
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