1. Material Science and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms arranged in a tetrahedral lattice, primarily in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying remarkable atomic bond strength.
The Si– C bond, with a bond energy of roughly 318 kJ/mol, is among the greatest in architectural porcelains, providing outstanding thermal stability, hardness, and resistance to chemical assault.
This durable covalent network causes a material with a melting point surpassing 2700 ° C(sublimes), making it one of the most refractory non-oxide porcelains available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC maintains mechanical strength and creep resistance at temperatures above 1400 ° C, where several metals and standard ceramics begin to soften or degrade.
Its low coefficient of thermal development (~ 4.0 × 10 ⁻⁶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) makes it possible for quick thermal biking without tragic fracturing, an important characteristic for crucible performance.
These inherent properties originate from the balanced electronegativity and comparable atomic dimensions of silicon and carbon, which promote a highly stable and largely loaded crystal structure.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are usually produced from sintered or reaction-bonded SiC powders, with microstructure playing a crucial function in sturdiness and thermal shock resistance.
Sintered SiC crucibles are produced with solid-state or liquid-phase sintering at temperature levels above 2000 ° C, typically with boron or carbon ingredients to enhance densification and grain limit communication.
This procedure yields a completely thick, fine-grained structure with minimal porosity (
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